光学学报, 2011, 31 (1): 0131003, 网络出版: 2010-12-31
激光溅射沉积制备的ZnO:Ga薄膜表面形貌分析
Morphology Analysis of ZnO:Ga Thin Films Deposited by Pulsed Laser Deposition
薄膜 原子力显微镜 高度高度相关函数 表面形貌 thin film ZnO：Ga ZnO:Ga atomic force microscope height-height correlation function morphology
摘要
薄膜表面形貌定量研究有助于薄膜生长机理的认识。研究的薄膜是用激光脉冲沉积法(PLD)制备的ZnO:Ga(GZO)透明导电薄膜。由于GZO薄膜的生长是在远离平衡态情况下实现的，具备自仿射分形特征，可以用高度高度相关函数进行描述。通过对用原子力显微镜(AFM)获得的表面高度数据进行相关运算，定量地分析了PLD制备的GZO薄膜的生长界面特征，求出了描述粗糙表面的高度高度相关函数的三个重要参量W，ξ和α，发现制备的GZO薄膜生长符合Kuromoto-Sivashinsky生长模型。
Abstract
The quantitative study on the film surface morphology is important for the understanding of thin film growth mechanism. The ZnO:Ga (GZO) transparent conductive film is prepared by pulsed laser deposition (PLD). Since this GZO film growth is far from equilibrium, the GZO film has self-affine fractal characteristics and can be described by height-height correlation function H (r, r+ρ). By using atomic force microscope to get the height data of the surface image, the quantitative analysis of height-height correlation function of the GZO film prepared by PLD is carried out. The values of the three important parameters W, ξ and α are measured and it is suggested that the growth of GZO thin film is consistent with Kuromoto-Sivashinsky growth model.
刘云燕, 程传福, 宋洪胜, 臧永丽, 杨善迎. 激光溅射沉积制备的ZnO:Ga薄膜表面形貌分析[J]. 光学学报, 2011, 31(1): 0131003. Liu Yunyan, Cheng Chuanfu, Song Hongsheng, Zang Yongli, Yang Shanying. Morphology Analysis of ZnO:Ga Thin Films Deposited by Pulsed Laser Deposition[J]. Acta Optica Sinica, 2011, 31(1): 0131003.
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