MOS电阻阵非均匀性校正一直是基于MOS电阻阵的场景产生器研究和发展的关键问题和前沿技术。在对128×128像元MOS电阻阵实验的基础上，分析了其非线性和非均匀性产生的原因，并提出了非均匀性校正算法。首先在MOS电阻阵中覆盖矩阵栅格，建立线性修正表格，然后通过采集校正后数据建立补偿表格，迭代这个修正过程完成校正补偿工作。实验结果表明非均匀性校正算法可行，校正后的红外图像均匀性有较大提高，较好地满足了红外成像制导仿真需求。

Nonuniformity correction technique for MOS resistor array is always the key problem and advanced technology in the research and development of infrared scene generator. After a lot of tests on 128 × 128 MOS resistor array, the cause of the nonlinearity and nonuniformity is deeply analyzed, and a novel nonuniformity correction algorithm for MOS resistor array is presented： firstly the entire projection array is covered with sparse grid, a linear look-up table is established, and then a compensating table is created by collecting the data after corrected. The entire procedure is iterated and proved by the experiment. The result shows that the uniformity of infrared image has a remarkable improvement after nonuniformity correction which preferably satisfies the requirement of the infrared imaging simulation.