红外技术, 2010, 32 (4): 223, 网络出版: 2011-01-05
n-on-p长波HgCdTe光伏器件的一种光谱现象解释
A Spectral Phenomenon’s Explanation of n-on-p Long Wavelength HgCdTe Photovoltaic Device
碲镉汞 B-M 效应 量子效率 相对响应光谱 理论计算 HgCdTe B-M effect quantum efficiency relative spectral response theoretical calculations
摘要
在对n-on-p长波HgCdTe 光伏器件光谱测试中，发现对于前照式型器件，光谱在中短波区有时会出现一个小峰。通过叠加原理的方式理论计算分析认为这是由于n 区的B-M 效应和量子效率导致的。
Abstract
In the spectra measurement of front-illuminated n-on-p long wavelength HgCdTe photovoltaic device, it is found that a peak appears sometimes, between the short wavelength region to the middle wavelength. According to superposition principle, the theoretical calculation results point out the reason of the phenomenon is the B-M effect and quantum efficiency of n region.
袁绶章, 张鹏, 康蓉, 韩福忠. n-on-p长波HgCdTe光伏器件的一种光谱现象解释[J]. 红外技术, 2010, 32(4): 223. 袁绶章, 张鹏, 康蓉, 韩福忠. A Spectral Phenomenon’s Explanation of n-on-p Long Wavelength HgCdTe Photovoltaic Device[J]. Infrared Technology, 2010, 32(4): 223.
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