Chinese Optics Letters, 2011, 9 (1): 010402, Published Online: Jan. 7, 2011
Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes 
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单光子雪崩二极管 盖革模式 雪崩击穿电压 040.1345 Avalanche photodiodes (APDs) 040.3060 Infrared 040.5160 Photodetectors 040.5570 Quantum detectors
Abstract
We examine the saturation of relative current gain of In0.53Ga0.47As/InP single photon avalanche diodes (SPADs) operated in Geiger mode. The punch-through voltage and breakdown voltage of the SPADs can be measured using a simple and accurate method. The analysis method is temperature-independent and can be applied to most SPADs.
Peng Zhou, Changjun Liao, Zhengjun Wei, Chunfei Li, Shuqiong Yuan. Determination of breakdown voltage of In0.53Ga0.47As/InP single photon avalanche diodes[J]. Chinese Optics Letters, 2011, 9(1): 010402.
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