Chinese Optics Letters, 2011, 9 (1): 011602, Published Online: Jan. 7, 2011
Temperature dependence of photoluminescence property in BaIn2O4 Download: 529次
BaO-In2O3 光致发光 氧空位 000.2190 Experimental physics 160.4760 Optical properties 160.6000 Semiconductor materials
Abstract
The temperature-dependent photoluminescence (PL) spectra of BaIn2O4, prepared by coprecipitation, are measured and discussed. Aside from the reported 3.02-eV violet emission, the 1.81-eV yellow emission involved with oxygen vacancy is also observed at room temperature wherein the deep donor level is at 1.2 eV. With the temperature increasing, the peak energies for both emissions show a red shift. Moreover, the yellow emission intensity decreases while the violet emission intensity increases. The temperature dependence of the yellow emission intensity fits very well into the one-step quenching process equation, indicating a fitted activation energy at 19.2 meV.
Huiyong Deng, Qiwei Wang, Ping Ren, Jie Wu, Junchao Tao, Xin Chen, Ning Dai. Temperature dependence of photoluminescence property in BaIn2O4[J]. Chinese Optics Letters, 2011, 9(1): 011602.