在单台面二极管晶圆的制备中，刀具划片存在速度慢、芯片崩边率高等问题。激光划片为非接触加工，成品率高。根据晶体硅的性质，对激光划片方向进行了讨论，分析了红外激光对硅片的作用机理。根据一维热传导方程导出的近似解析解，计算了功率和扫描速度影响下的去除深度。使用1064 nm脉冲光纤激光器完成了7.62 cm晶圆的激光划片，获得了崩边率小于1%，电性能合格率达到100%的样品。研究表明，去除深度影响芯片的崩边率，离焦量影响芯片的电性能。控制去除深度和离焦量进行划片会获得很高的良品率。

Compared with the traditionally manufacture of single mesa diode wafer which has some disadvantages such as low speed and high chipping rate of blade-sawing, laser scribing is of high yield rate because of non-contact processing. According to the properties of crystal silicon (Si), the direction of the scribing and its mechanism of Si processed by infrared (IR) laser are discussed. On the base of approximate analytical solution derived from one-dimensional heat conduction equation, the ablation depth influenced by laser power and scanning speed is calculated. 7.62 cm wafer scribed under the condition of 1064 nm pulsed fiber laser shows that chipping rate is less than 1% and eligible electrical properties attain 100%. Research shows that ablation depth can influence the chipping rate and defocusing amount can influence the electrical properties of the chip. High yield rate can be achieved by controlling the ablation depth and defocusing amount during the scribing.