激光与光电子学进展, 2011, 48 (3): 031402, 网络出版: 2011-01-18
Littrow型光栅外腔半导体激光器的输出特性分析
Output Characteristics of Littrow-Type Grating External Cavity Semiconductor Lasers
激光技术 外腔半导体激光器 输出功率 线宽压窄 laser technique external cavity diode laser output power linewidth reduction
摘要
在讨论光栅外腔半导体激光器理论的基础上，对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析。研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400 mA时，连续输出功率达到180 mW,线宽优于1 MHz。
Abstract
The theory of grating external cavity semiconductor lasers is discussed, and the influences of different factors on the output power and linewidth reduction of the Littrow-type external cavity semiconductor lasers are numerically simulated. The Littrow-type grating external cavity semiconductor laser is set up, and single longitudinal mode and highly-equality laser output is realized. The continuous output power is achieved with 180 mW at working current of 400 mA and the spectrum linewidth is less than 1 MHz.
雷平顺, 薛力芳, 何军, 曾华林, 付跃刚, 周燕. Littrow型光栅外腔半导体激光器的输出特性分析[J]. 激光与光电子学进展, 2011, 48(3): 031402. Lei Pingshun, Xue Lifang, He Jun, Zeng Hualin, Fu Yuegang, Zhou Yan. Output Characteristics of Littrow-Type Grating External Cavity Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2011, 48(3): 031402.
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