提出了采用芯片表面上方形载荷导线框产生的静电场实现极性冷分子芯片表面囚禁的新方案，计算了方形载荷导线框周围的电场分布，分析了囚禁中心位置和导线框几何参数之间的依赖关系，并研究了过囚禁中心在x和z方向的电场强度和其对应的CO分子的Stark囚禁势与几何参数之间的关系。研究表明，对于CO分子，该方案的有效势阱深度可达130 mK，这足以囚禁温度约为50 mK处于弱场搜寻态的极性冷分子。显然，这样的静电表面势阱在分子光学和分子芯片、量子光学、量子计算和量子信息处理等领域中都有重要的应用。

A novel scheme is proposed to realize the electrostatic surface trapping of cold polar molecules on a chip by using a square charged wire. The spatial distribution of the electrostatic field around the square charged wire is calculated. Then the dependent relation between the position of trapping center and the geometric parameters is analyzed. Afterwards, the dependences of the electric field distribution (including the corresponding Stark trapping potential for CO molecules) on the geometric parameters of the square wire is studied in the x and z direction. The study shows that the efficient trapping potential for CO molecules is greater than 130 mK, which is high enough to trap cold polar molecules with a temperature of 50 mK in the weak-field-seeking states. Obviously, the electrostatic surface trapping proposed here has some important applications in the fields of molecular optics and molecular chip, quantum optics, quantum computing and quantum information processing, etc.