在不采用任何金属催化剂的条件下，运用化学气相沉积法，在 Si(100)衬底上制备出高取向的As掺杂ZnO纳米线阵列。样品的X射线衍射(XRD)谱显示获得了单一取向的衍射峰，表明样品具有较好的结晶质量。场发射扫描电镜(FE-SEM)观察表明，As掺杂ZnO纳米线阵列具有均一的直径和长度，其顶部和根部直径分别为70 nm和100 nm，长度约为1.5 μm。此外，在能量色散谱(EDS)中观测到了As元素的存在。在低温(11 K)光致发光谱中还观测到了与As掺杂相关的中性受主束缚激子发光(A0X)，证实As元素作为受主掺杂进入ZnO晶格。As掺杂ZnO纳米线的成功制备为ZnO基纳米光电器件的实现提供了一种可行的p型掺杂方法。

The ZnO nanowires were grown on Si(100) substrates by chemical vapor deposition method without using catalyst. The X-ray diffraction (XRD) indicates the highly preferred crystal orientation along the c axis of ZnO in this sample. Field emission scanning electron microscope(FE-SEM) showed well-aligned ZnO nanowires with uniform diameter, length, and density were grown perpendicularly on Si substrate. The top and root diameter of the ZnO nanowires are about 70 nm and 100 nm, respectively, and the length of the nanowires is about 1.5 μm. Furthermore, the As elements were detected in the arsenic doped ZnO nanowires by the energy-dispersive X-ray spectroscopy (EDS). The arsenic related acceptor emission was observed in the photoluminescence spectra at 11 K for all arsenic doped ZnO samples. This preparation method of arsenic doped ZnO nanowires may provide a new way for realizing the ZnO nanowires based light emitting diode and laser diode.