讨论了在低温下以高纯金属钒作靶材,用直流磁控溅射的方法制备出了氧化钒薄膜。通过设计正交试验,分析了氩气和氧气的流量比,溅射功率,工作压强,基底温度对氧化钒薄膜沉积速率和电阻温度系数TCR的影响,采用RTP-500型快速热处理机对氧化钒薄膜样品进行了退火热处理,实验结果表明：当Ar与O2的比例为100：4,溅射功率为120W,工作压强为2Pa时,所获得薄膜TCR较大,都在-2%/K附近,最高的可达-3.6%/K.

VOx films with high TCR are reported. The VOx filems are fabricated by DC magnetron sputtering with a highly pure vanadium metal(99.99%) as target. By the orthogonal experiment, the influence on the TCR is analysized with the ratio of Ar/O2 , the sputtering power, the gas pressure and the annealing temperature-time. The results show that the high TCR can be achieved when the ratio of Ar/O2 is 100:4, the sputtering power is 120W and the gas pressure is 2Pa. It is also reseached that the annealing temperature-time influence on the TCR. In the optimal situation, the highest TCR of-3.6%/K is obtained.