红外, 2010, 31 (2): 8, 网络出版: 2011-02-23
基于Ⅱ-Ⅵ族半导体量子点的白光LED的研究进展
Progress of White Light-Emitting Diodes Based on II-VI Semiconductor Quantum Dots
摘要
作为发光可覆盖整个可见光波段的发光材料,Ⅱ-Ⅵ族半导体量子点自上世纪90年代以来一直是构筑白光发光二极管(LED) 的关键材料之一。本文主要介绍基于缺陷态发光、单源二色互补发光、三基色复合发光和光致发光等发光原理的半导体量子点的白光LED,并比 较了不同类型器件的特点。凭借发光效率等主要性能参数的优势,基于GaN基蓝紫光与量子点荧光粉组合得到的白光LED将最有可能首先实现商 业化应用。而在高清显示技术方面,结合微接触印刷技术的三基色复合白光LED具有潜在应用价值。最后简要介绍在提高白光LED发光效率方面 的进展。
Abstract
Since the 1990s, as a luminescent material which is useful in the whole visible waveband, the II-VI semiconductor quantum dot has been one of the key materials for white light-emitting diodes (LED). The white quantum dot LEDs based on the luminescent principles such as defect state emission, single source binary complementary emission, mixed tricolour emission and pholuminescence are presented mainly and compared with each other. Because of the predominance in luminescent efficiency and so on, the white LEDs based on GaN blue-violet light and quantum dot fluorophores will be most likely used in commercial applications. In the aspect of high resolution displays, the mixed tricolour white LEDs using microcontact printing are promised potentially. Finally, the improvement of white LEDs in luminescent efficiency is presented in brief.
乐阳, 孙艳, 陈鑫, 戴宁. 基于Ⅱ-Ⅵ族半导体量子点的白光LED的研究进展[J]. 红外, 2010, 31(2): 8. YUE Yang, SUN Yan, CHEN Xin, DAI Ning. Progress of White Light-Emitting Diodes Based on II-VI Semiconductor Quantum Dots[J]. INFRARED, 2010, 31(2): 8.