：针对功率型LED 器件的热特性，以热应力理论为依据，采用有限元软件ANSYS 进行热应力计算，得到了Lumileds 的1 W LED 瞬态温度场和应力场分布云图，基板顶面平行于X 轴路径上的热应力、应变及剪应力的分布曲线。模拟结果表明最大应力集中在键合层边角处；轴向最大位移在透镜与热沉接触边缘；最大剪应力集中在键合层的边角区域。通过实验测试了LED 基板底面中心点的温度变化，与仿真结果相符合，研究了各层材料导热系数对LED 温度场和应力场分布的影响。最后根据以上的研究结论提出了提高LED 品质的方法。论文结果对大功率LED 封装具有意义。

Thermal characterization of high-power Lighting Emitting Diode (LED) device was reported, utilizing finite element software ANSYS with thermal stress analysis based on the thermal stress theory, and the transient temperature and stress field were obtained. The thermal stress, displacement and shear stress distribution on the path which was parallel with X axis at the top of LED substrate were calculated. The simulation results indicated that the maximum von mises stress was at the corner of the thermal sink and die attach, and the maximum displacement was located at the edge between the lens and the thermal sink. The maximum shear stress was concentrated at the corner region. The numerical study that was carried out with LED base center to understand the temperature distribution by FEM technology was experimentally calibrated. Finally, variation of the maximum temperature and maximum thermal stress with thermal conductivity of various materials was considered. The results are of great importance to the high-power LED package.