采用电子束蒸发的方式,制备了有氧化硅内保护层和没有氧化硅内保护层的1 064 nm高透过、532 nm高反射的HfO2/SiO2双色膜,测量了它们的光学性能以及在基频和倍频激光辐照下的抗损伤性能。结果表明:氧化硅内保护层提高了双色膜在基频光辐照下的损伤阈值，对双色膜在倍频光辐照下的损伤阈值无明显影响。通过观察薄膜的损伤形貌，分析破斑的深度信息结合驻波场分布，对两类双色膜在基频光和倍频光下的损伤机制做了初步探讨。分析表明:氧化硅内保护层提高了膜基界面的抗损伤性能，从而提高了双色膜在基频光下的损伤阈值。

1 064 nm antireflection/532 nm high-reflection bichromatic coatings with and without barrier layer were fabricated on the UBK7 substrate using electron beam evaporation technique. The optical property and laser-induced damage threshold(LIDT) of the coatings were investigated, respectively. Compared with the coatings without barrier layer, the 1 064 nm LIDT of the bichromatic coatings with SiO2 barrier layer is 49.6% higher. By analyzing the morphology and depth information of laser-induced damage spots, and the standing wave electric field distribution of the film stacks, the mechanisms of 1 064 nm and 532 nm laser-induced damages of the bichromatic coatings were discussed. The results show that SiO2 barrier layer strengthens the coatings-substrate interface, and therefore the 1 064 nm LIDT of the bichromatic coatings with barrier layer is improved.