光子学报, 2011, 40 (2): 199, 网络出版: 2011-03-08
一种采用Li3N掺杂电子注入层的底发射倒置结构OLED的制备
Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer
有机发光器件 倒置底发射结构 n型掺杂 势垒 Organic light-emitting device Inverted bottom emitting Li3N Li3N n-type doping Barrier
摘要
采用Li3N掺杂电子注入层Alq3∶Li3N，制作了一种结构为ITO/Alq3 Alq3∶Li3N/Alq3/NPB/MoO3/Al的倒置底发射有机发光器件.其中ITO玻璃作为透明阴极，金属Al作为顶部阳极，在ITO阴极与电子传输层之间加入Li3N n型掺杂层， 改善了该器件的电子注入和传输能力；在Al阳极与空穴传输层之间加入MoO3缓冲层，降低了Al阳极与NPB之间较大的空穴注入势垒，改善了空穴注入能力.实验表明:此结构的倒置底发射有机发光器件性能可达到传统结构的常用有机发光器件如ITO/NPB/Alq3/LiF/Al的性能，完全可以满足非晶硅薄膜晶体管有源有机发光器件中驱动电路的匹配及性能要求.
Abstract
The fabrication of a kind of inverted bottom organic light-emitting device was reported,using Li3N doping layer Alq3∶Li3N as electron injecting layer. The structure of this device is ITO/Alq3∶Li3N/Alq3/NPB/MoO3/Al. In this device, ITO glass was used as transparent cathode, Al as top anode, the Li3N n-type doping layer Alq3∶Li3N was inserted the ITO cathode and the electron transporting layer, the electron injecting and transporting ability of this device was improved. And 10nm MoO3 was inserted as the buffer layer between Al anode and hole transporting layer NPB, and the hole injecting ability of this device was enhanced. Experiments show that the device with this structure performs as well as the organic light-emitting device with traditional structure such as ITO/NPB/Alq3/LiF/Al. This device can be used in amorphous silicon thin film transistor active matrix organic light-emitting device display.
张睿, 李传南, 李涛, 崔国宇, 侯晶莹, 赵毅, 刘式墉. 一种采用Li3N掺杂电子注入层的底发射倒置结构OLED的制备[J]. 光子学报, 2011, 40(2): 199. 张睿, 李传南, 李涛, 崔国宇, 侯晶莹, 赵毅, 刘式墉. Fabrication of Inverted Bottom Organic Light-emitting Device with Li3N n-type Doping Electron Injecting Layer[J]. ACTA PHOTONICA SINICA, 2011, 40(2): 199.
PDF全文
