为了从理论上分析提高非晶硅太阳能电池的转化效率，运用微电子和光子结构分析一维器件模拟程序模拟非晶硅太阳电池a-SiC∶H/a-Si∶H/a-Si∶H结构，分析比较了不同前端接触透明导电层的功函数ФITO、禁带宽度、本征层厚度、掺杂浓度、缺陷态密度等因素对太阳电池性能的影响.模拟得到，在功函数达到5.1 eV，禁带宽度1.8 eV，本征层厚度265 nm等最优化条件下，非晶硅太阳能电池转化效率达到9.855%，比一般非晶硅太阳能电池转化效率高近2%.

In order to theoretically improve the conversion efficiency of amorphous silicon solar cells, this article uses AMPS (Analysis of Microelectronic and Photonic Structures) mode was used to module the a-Si solar cells with a structure of TCO/p-a-SiC∶H/i-a-Si∶H/n-a-Si∶H/metal. The intrinsic layer thickness, band gap, doping concentration, defect density of states and other factors were analyzed and compared on the performance of solar cells. The simulation results are as follows: when the work function equals to 5.2 eV, band gap is about 1.8 eV, the intrinsic layer thickness is 265 nm, and amorphous silicon solar cell′s conversion efficiency can be 9.855%, which is almost 2% more than the average conversion efficiency of amorphous silicon solar cells.