为了研究互注入半导体激光器产生的混沌带宽及复杂程度, 采用互注入半导体激光器速率方程进行了理论分析。结果表明, 随着注入系数的增加, 混沌的带宽变大, 混沌复杂程度变高; 偏置电流越大, 混沌的带宽越大, 时间序列标准差越大, 混沌越复杂。这为实现更为复杂的高带宽混沌提供了理论指导。

In order to study the chaos complexity degree and bandwidth of mutually coupled semiconductor lasers, numerical analysis was carried out based on their rate equations. The results indicate that the chaotic bandwidth enhances with the increase of injection coefficient, and chaos turns more complicated. The higher the current biases, the larger chaotic bandwidth turns and the more complex the chaos wave is. These results provide theoretic guidance to realize broad bandwidth complex chaos.