光谱学与光谱分析, 2011, 31 (2): 340, 网络出版: 2011-03-24
Rubrene薄层的位置对器件发光性能的影响及器件内激子复合区域的分析
Effect of Rubrene Position on the EL Performance of the Device and Analysis of the Exciton Recombination Zone
摘要
通过在主体材料上蒸镀一层荧光染料超薄层的方法, 研究了有机小分子5,6,11,12-tetraphenylnaphthacene (rubrene)薄层在器件中不同位置时, 有机电致发光器件(OLED)的电致发光光谱及发光性能。 实验发现当rubrene薄层位于NPB/AlQ界面处时, 器件的发光几乎都来自rubrene的发光; 当薄层位置远离界面时, 器件的发光则同时来自rubrene和AlQ的发光。 通过对器件电致发光光谱的分解, 研究了rubrene薄层在不同位置时器件发射光谱的变化, 并确定了rubrene和AlQ两种材料各自对器件电致发光的贡献, 进一步分析了rubrene发光强度与该薄层位置之间的关系。 通过分析, 得到激子在AlQ层中的迁移长度约在15~20 nm之间。 此外, 还进一步探讨了该器件中激子复合及传输的特点。
Abstract
By using an ultrathin 5,6,11,12-tetraphenylnaphthacene (rubrene) layer deposited on the top of host materials, the influence of rubrene layer position on the electroluminescence (EL) spectra of organic light-emitting devices (OLEDs) was studied.When the rubrene layer is located at the interface between N,N’-diphenyl-N,N’-bis(1-naphthyl)-(1,18-biphenyl)-4,4’-diamine (NPB) and tris(8-hydroxyquinoline) aluminum (AlQ) layer, EL luminescence of the device is nearly coming from rubrene emission. From the analysis of the EL spectra of the devices with different rubrene layer position, the solely contribution of rubrene and AlQ, respectively, to the luminescence of the devices is determined by spectra unmixing. Based on the analysis, the exciton length in AlQ layer is determined to be about 15-20 nm. The exciton transport and recombination characteristics are also discussed in this work.
徐登辉, 李熊, 王秀娥, 赵慈, 赵佳, 邓振波, 吕昭月, 陈征. Rubrene薄层的位置对器件发光性能的影响及器件内激子复合区域的分析[J]. 光谱学与光谱分析, 2011, 31(2): 340. XU Deng-hui, LI Xiong, WANG Xiu-e, ZHAO Ci, ZHAO Jia, DENG Zhen-bo, L Zhao-yue, CHEN Zheng. Effect of Rubrene Position on the EL Performance of the Device and Analysis of the Exciton Recombination Zone[J]. Spectroscopy and Spectral Analysis, 2011, 31(2): 340.