发光学报, 2011, 32 (3): 282, 网络出版: 2011-03-31
采用MBE生长1.6～2.3 μm InGaAsSb/AlGaAsSb多量子阱
Growth of 1.6～2.3 μm InGaAsSb/AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy
摘要
采用分子束外延生长了不同In组分的InGaAsSb/AlGaAsSb多量子阱材料。X射线衍射发现量子阱材料有多级衍射卫星峰出现, 表明量子阱的界面均匀性和质量较好。研究了不同In组分与光致发光波长的关系, 光荧光谱测试表明, 所制备的不同In组分的InGaAsSb/AlGaAsSb多量子阱材料, 在室温下的发光波长可以覆盖1.6～2.3 μm的范围。
Abstract
InGaAsSb/AlGaAsSb multi-quantum-well(MQWs) were grown by molecular beam epitaxy. The X-ray diffraction pattern presents multi-levels of satellite peaks, which indicate a good interface and excellent crystal quality. Meanwhile, photoluminescence shows the emission wavelength at room temperature covers 1.6～2.3 μm with varing In compositions in InGaAsSb/AlGaAsSb MQWs.
尤明慧, 高欣, 李占国, 刘国军, 李林, 李梅, 王晓华, 薄报学. 采用MBE生长1.6～2.3 μm InGaAsSb/AlGaAsSb多量子阱[J]. 发光学报, 2011, 32(3): 282. YOU Ming-hui, GAO Xin, LI Zhan-guo, LIU Guo-jun, LI Lin, LI Mei, WANG Xiao-hua, BO Bao-xue. Growth of 1.6～2.3 μm InGaAsSb/AlGaAsSb Multi-quantum-well by Molecular Beam Epitaxy[J]. Chinese Journal of Luminescence, 2011, 32(3): 282.
PDF全文
