中国光学, 2011, 4 (1): 86, 网络出版: 2011-04-01   

不同气体环境下532 nm激光诱导硅表面形貌的研究

Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres
作者单位
西南科技大学 理学院 激光与光电子实验室,极端条件物质特性实验室,四川 绵阳 621010
摘要
研究了在不同气体环境下,利用532 nm Nd∶YAG纳秒脉冲激光累积辐照单晶硅表面形成的微结构,结果表明,在其他条件相同,背景气体不同的情况下,背景气体对硅表面形貌的形成起着重要的作用。具体分析了真空、N2和SF6 3种环境气氛下形成的微结构,结果显示,在SF6中形成的锥形微结构的数密度比在N2和真空中的大,并且锥形具有更大的纵横比; 在N2、真空和SF6中形成的微结构尺寸依次减小。SF6气氛下,激光辅助化学刻蚀的效率比在真空和N2气氛中的高。另外,辐照区域边缘有波纹微结构形成,分析认为,该微结构的形成是由表面张力波的冷却导致的。
Abstract
The micro-structures of single crystal silicon surfaces produced by the cumulative radiation from 532 nm Nd∶YAG nanosecond laser pulses were investigated under different ambient atmospheres. The results show that the ambient atmospheres have an important role on the silicon surface morphology. The microstructures produced in vacuum, N2 or SF6 were analyzed in detail, it was indicated that the density of the spikes formed in SF6 is larger than those formed in N2 or vacuum, and the spikes have higher aspect ratios than those in other ambient atmospheres. Furthermore, the dimensions of the microstructures formed in N2, vacuum or SF6 have decreased in turn. The experimental results suggest that the efficiency of laser-induced chemical etching in SF6 atmosphere is higher than those in vacuum or N2 atmospheres. Moreover, there are ripple microstructures formed on the edge of irradiation area, which is caused by the frozing of capillary waves.

杨宏道, 李晓红, 李国强, 袁春华, 邱荣. 不同气体环境下532 nm激光诱导硅表面形貌的研究[J]. 中国光学, 2011, 4(1): 86. YANG Hong-dao, LI Xiao-hong, LI Guo-qiang, YUAN Chun-hua, QIU Rong. Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres[J]. Chinese Optics, 2011, 4(1): 86.

本文已被 2 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!