中国激光, 2011, 38 (5): 0502003, 网络出版: 2011-05-09
利用高速GaAs光电导开关实现腔倒空激光脉冲输出
Cavity Dumped Laser Using Fast GaAs Photoconductive Switch
激光技术 电光调Q 腔倒空 稳定腔 GaAs光电导开关 Nd:YAG激光器 lasers technique electro-optical Q-switched cavity dumping stable resonator GaAs photoconductive switch Nd:YAG laser
摘要
腔倒空技术是一种有效产生大能量、短脉冲激光输出的调Q技术,其产生的Q开关激光脉冲的宽度主要由谐振腔腔长决定。大孔径半绝缘GaAs光电导开关(PCSS)是一种可耐高压的光控开关,具有响应速度快、时间抖动小、耐压高、暗电阻大、导通电阻小等特点,将其直接作为控制腔倒空激光器的光反馈回路和高电压开关,在腔长为20 cm的氙灯抽运Nd:YAG电光调Q激光器上实现了激光波长1064 nm、单脉冲能量15 mJ、脉冲半峰全宽 (FWHM)为1.7 ns的腔倒空激光脉冲稳定输出,脉冲宽度峰峰值抖动优于7%,能量峰峰值抖动优于3%。
Abstract
Cavity dumping is an effective technique for generating Q-switched laser pulses of relatively large energy and extremely short time duration, and the width of Q-switched pulses is primarily a function of the oscillator cavity length. The solid state lateral semi-insulating GaAs photoconductive semiconductor switch (PCSS) has the unique ability to handle high power at very fast response time with very little timing jitter. A novel and effective technique of cavity dumping laser for generating short Q-switched laser pulses with a GaAs PCSS is presented. In a flashlamp pumped Nd:YAG laser with 20 cm long stable resonator, 1.7 ns short laser pulses have been obtained, and the pulse to pulse duration instability is less than 7% and energy instability is less than 3%.
朱少岚, 赵卫, 刘百玉, 施卫, 杨延龙. 利用高速GaAs光电导开关实现腔倒空激光脉冲输出[J]. 中国激光, 2011, 38(5): 0502003. Zhu Shaolan, Zhao Wei, Liu Baiyu, Shi Wei, Yang Yanlong. Cavity Dumped Laser Using Fast GaAs Photoconductive Switch[J]. Chinese Journal of Lasers, 2011, 38(5): 0502003.