Chinese Optics Letters, 2011, 9 (5): 053102, Published Online: Apr. 22, 2011
Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100x films Download: 628次
掺硅氧化锆薄膜 椭圆偏振光谱术 阻抗开关特性 310.6188 Spectral properties 310.6860 Thin films, optical properties 250.6715 Switching
Abstract
We prepare Six(ZrO2)100?x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer, respectively. With the proper Si-doped Six(ZrO2)100?x interlayer, the Al/ Six(ZrO2)100?x/Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.
Xiaodong Wang, Liang Feng, Shenjin Wei, Huanfeng Zhu, Kun Chen, Da Xu, Ying Zhang, Jing Li. Spectroscopic ellipsometric properties and resistance switching behavior in Six(ZrO2)100x films[J]. Chinese Optics Letters, 2011, 9(5): 053102.