采用直流磁控溅射工艺，使用掺铝氧化锌(AZO)陶瓷靶，在玻璃基底上制备出具有c轴择优取向的AZO透明导电薄膜。运用共焦显微拉曼光谱仪对AZO陶瓷靶的微结构进行了表征，对在不同基底温度下沉积出来的薄膜运用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外可见光分光光度计和四探针测试仪等分别进行了结构和光电特性的表征。结果表明，随着基底温度的升高，AZO薄膜的晶粒逐渐增大，c轴择优取向加强，结晶状况变好；AZO薄膜的吸收边发生蓝移，折射率降低，而薄膜厚度则有所增加，光学禁带宽度增大；AZO薄膜的电阻率降低，但在基底温度达到350 ℃后电阻率就趋于稳定。

Transparent and conductive c-axis oriented aluminum-doped zinc oxide (AZO) films have been prepared on glass substrate by DC magnetron sputtering processing. For this purpose, a sintered ceramic disc of ZnO mixed with Al2O3 is used as the target. The microstructure of AZO ceramic target is characterized by micro-Raman spectroscopy. The structural, optical and electrical properties of the films are characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), UV-visible spectrophotometer and four-probe tester respectively. As the substrate temperature increases, the results show that grain size of the AZO films gradually increases, the films have a strong c-axis orientation and the crystallization of films becomes better. The absorption edge has a blue shift with increasing deposition temperature. The refractive index of the films decreases but films thickness and optical band gap increase with increasing deposition temperature. Resistivity of AZO films decreases with increasing deposition temperature but resistivity approaches stable after substrate temperature reaches 350 ℃.