利用分子束外延方法生长的InP/InGaAs/InP双异质结材料，通过台面成型、有效钝化和欧姆接触电极制备等工艺，制作了512×1元的背照射InGaAs光敏芯片，光敏芯片响应波段为0.95~1.7 μm，平均峰值响应率约为0.97 A/W。512×1元光敏芯片与512×1元电容反馈互导放大器(CTIA)读出电路通过基板间接倒焊互连后形成512×1元近红外InGaAs模块。两个512元模块经过有效元交叠的方式拼接形成1024×1元近红外InGaAs线列焦平面组件，并被封装于带热电致冷器的金属管壳中，室温下组件的响应非均匀性为5.8%，盲元率为0.6%，平均峰值探测率为6.10×1011 (cm·Hz1/2)/W。采用热电致冷器可以稳定组件工作温度，在5 ℃时组件功耗为3.10 W。

The double hetero-junction InP/InGaAs/InP material is grown by molecular beam epitaxy. The back-illuminated 512×1 elements InGaAs photo-detectors are fabricated using the improved process including the profile etching, effective passivation and ohmic contacts. Response spectra of 512×1 elements InGaAs photo-detectors range from 0.95 to 1.7 μm and the average peak resoponsivity is 0.9 A/W. 512×1 elements InGaAs photo-detectors are connected to readout circuit with capacitive transimpedance amplifer (CTIA) input stage by transitional base plane using In bump flip chip so that 512×1 elements InGaAs module is fabricated. The 1024×1 elements InGaAs FPA are fabricated using the two 512×1 elements InGaAs modules joint by interlaced effective pixels and are sealed in metal package with thermal electrical cooler (TEC). The response non-uniformity, blind pixels ratio and average peak detectivity of 1024×1 elements InGaAs FPAs are 8%, 1% and 7×1011(cm·Hz1/2)/W, respectively at room temperature. The working temperature of FPAs assembly is stabilized by using TEC, power consumption of FPAs assembly at 5 ℃ is 3.10 W.