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Low threshold voltage light-emitting diode in silicon-based standard CMOS technology

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Abstract

Low-voltage silicon (Si)-based light-emitting diode (LED) is designed based on the former research of LED in Si-based standard complementary metal oxide semiconductor (CMOS) technology. The low-voltage LED is designed under the research of cross-finger structure LEDs and sophisticated structure enhanced LEDs for high efficiency and stable light source of monolithic chip integration. The device size of low-voltage LED is 45.85\times 38.4 (\mu m), threshold voltage is 2.2 V in common condition, and temperature is 27 oC. The external quantum efficiency is about 10^{-6} at stable operating state of 5 V and 177 mA.

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所属栏目:Optical devices

收稿日期:2011-02-28

录用日期:2011-03-25

网络出版日期:2011-05-31

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董赞:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
王伟:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
黄北举:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
张旭:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
关宁:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
陈弘达:State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

联系人作者:联系作者(dongzan@semi.ac.cn)

备注:This work was supported by the National Natural Science Foundation of China (Nos. 61036002, 60536030, 60776024, 60877035, 61076023, and 90820002) and the National "863" Program of China (Nos. 2007AA04Z329, 2007AA04Z254, 2011CB933203, and 2011CB933102).

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引用该论文

Zan Dong, Wei Wang, Beiju Huang, Xu Zhang, Ning Guan, Hongda Chen, "Low threshold voltage light-emitting diode in silicon-based standard CMOS technology," Chinese Optics Letters 9(8), 082301 (2011)

被引情况

【1】韩磊,张世林,郭维廉,毛陆虹,谢生,张兴杰,谷晓. 标准CMOS工艺载流子注入型三端Si-LED的设计与研制. 发光学报, 2012, 33(4): 444-448

【2】. Optical behavior of self-assembled high-density Ge nanoislands embedded in SiO2. Chinese Optics Letters, 2013, 11(11): 112502-112506

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