文章首先提出多晶硅薄膜晶体管几种减小漏电流的方法，接着对采用超薄沟道结构和普通沟道结构的多晶硅薄膜晶体管的电特性进行对比，发现采用超薄沟道结构具有优越性，最后分析了器件特性与材料性质之间的关系。

At first, several methods to decrease the leakage currents of poly-silicon thin film transistors are proposed. Then, the electric characteristics of p-Si TFTs which use ultra-thin channel and common channel are compared respectively, and find that the former behaviors better. At last, the relationships between the device's performances and the material's characteristics are analyzed.