红外与毫米波学报, 2011, 30 (3): 268, 网络出版: 2011-06-14  

GaInNAs薄膜中深能级弛豫过程的皮秒泵浦探测研究

Trapped carrier relaxation in deep level states in GaInNAs: studied with picosecond pumpprobe measurements
作者单位
中国科学院上海技术物理研究所 红外物理国家重点实验室,上海200083
摘要
应用泵浦探测方法研究了GaInNAs载流子动力学.差分透射强度随时间变化曲线表明,深能级中被俘获电子在光学瞬态吸收中起重要作用.为了模拟GaInNAs中光生载流子动力学过程和拟合泵浦探测实验结果,采用了一个简化的微分方程模型,该模型能够解释被深能级俘获电子的弛豫过程,并可获得驰豫过程的时间常数.
Abstract
A pumpprobe study of carrier dynamics in GaInNAs was carried out. Induced absorption by trapped electrons in deep level states becomes important as inferred from the sign of the transmittance change. A simplified differential equation model has been utilized to simulate photogenerated carrier dynamics in GaInNAs and to fit differential transmission results. The model can interpret the temporal evolution of the trapped carrier density and extract the time constants of the carrier relaxation processes.

马法君, 李志锋, 陈平平, 陆卫. GaInNAs薄膜中深能级弛豫过程的皮秒泵浦探测研究[J]. 红外与毫米波学报, 2011, 30(3): 268. MA FaJun, LI ZhiFeng, CHEN PingPing, LU Wei. Trapped carrier relaxation in deep level states in GaInNAs: studied with picosecond pumpprobe measurements[J]. Journal of Infrared and Millimeter Waves, 2011, 30(3): 268.

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