光学学报, 2011, 31 (s1): s100308, 网络出版: 2011-06-23
62%电光转换效率的高功率808 nm半导体激光器
High Power 808 nm Laser Diode with 62% Wall-Plug Efficiency
半导体激光器 电光转换效率 低压金属有机化学气相沉积 semiconductor laser wall-plug efficiency low pressure metal organic chemical vapor depositi GaAsP/GaInP/AlGaInP GaAsP/GaInP/AlGaInP
摘要
针对半导体激光器的能量损耗情况,设计优化了半导体激光器的结构,改进了材料的金属有机化学气相沉积(MOCVD)生长条件。采用低压MOCVD外延技术生长了GaAsP/GaInP/AlGaInP应变量子阱大光腔结构,进而设计制作了808 nm大功率连续激光器芯片。25 ℃下,当输入电流10 A时,输出功率超过11.5 W,最大电光转换效率约62%。对5 W输出功率的808 nm激光器进行了老化实验,1000 h衰减小于2%。
Abstract
Based on the analysis of energy loss in a laser diode, we optimize the structure of the laser diode and metal organic chemical vapor deposition (MOCVD) growth condition. By low pressure (LP) MOCVD, GaAsP/GaInP/AlGaInP strained quantum well large optical cavity structure is grown, and high power continuous wave (CW) 808 nm laser diode is fabricated. At 25 ℃ under CW operation condition, an output power of 11.5 W is obtained at 10 A current, with the threshold current being 1.15 A. The wall-plug efficiency reaches 62%. With the operation current of 5.5 A at 40 ℃, less than 2% output power degenerates over 1000 h.
李沛旭, 蒋锴, 张新, 汤庆敏, 夏伟, 李树强, 任忠祥, 徐现刚. 62%电光转换效率的高功率808 nm半导体激光器[J]. 光学学报, 2011, 31(s1): s100308. 李沛旭, 蒋锴, 张新, 汤庆敏, 夏伟, 李树强, 任忠祥, 徐现刚. High Power 808 nm Laser Diode with 62% Wall-Plug Efficiency[J]. Acta Optica Sinica, 2011, 31(s1): s100308.