发光学报, 2011, 32 (6): 550, 网络出版: 2011-06-24  

Zn2SiO4∶Mn2+发光材料的低温合成及其发光性能

Low-temperature Synthesis and Luminescence Properties of Zn2SiO4∶Mn2+ Phosphors
作者单位
合肥工业大学 材料科学与工程学院, 安徽 合肥 230009
摘要
采用水热合成工艺低温制备了Mn2+掺杂的Zn2SiO4发光材料,采用X射线衍射(X-ray diffraction,XRD)、扫描电子显微镜(Scanning electron microscope, SEM)对样品的结构和形貌进行观察,并以此分析了水热过程中Zn2SiO4的形成机制。采用吸收光谱、荧光光谱对其光吸收及光致发光性能进行分析。测试结果表明: 水热220 ℃反应6 d基本可获得完全的Zn2SiO4,产物为短棒状,宽度约为0.25 μm,长度约为1 μm。吸收光谱显示产物在380, 250, 220 nm处存在光吸收,并且在253 nm紫外光激发下产生强烈的522 nm绿色发光。
Abstract
Mn2+ doped Zn2SiO4 phosphors had been prepared by hydrothermal method in stainless-steel autoclaves using the mixed solvent of ethidene diamine and H2O. The crystalline structures and the morphologies of the samples were studied with X-ray diffraction apparatus (XRD) and scanning electron microscopy (SEM), and the reaction process was detected with the results of XRD and SEM. The optic properties were measured with UV-Vis Absorption Spectrometer and Fluorescence spectrometer. Results show that Zn2SiO4 crystal can be obtained by hydrothermal method at 200 ℃ for 6 d, and the product is a short rod with the width about 0.25 μm and the length about 1 μm. Absorption spectra show an absorption edge at about 380 nm and two absorption bands at about 250 nm and 220 nm. Mn2+ doped Zn2SiO4 has a luminescence band with the peak wavelength at about 522 nm under 253 nm excitation without further thermal treatment.

徐光青, 刘家琴, 郑治祥, 吴玉程. Zn2SiO4∶Mn2+发光材料的低温合成及其发光性能[J]. 发光学报, 2011, 32(6): 550. XU Guang-qing, LIU Jia-qin, ZHENG Zhi-xiang, WU Yu-cheng. Low-temperature Synthesis and Luminescence Properties of Zn2SiO4∶Mn2+ Phosphors[J]. Chinese Journal of Luminescence, 2011, 32(6): 550.

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