大功率半导体激光器一般用作抽运源，但其抽运的离子吸收峰带宽一般都比较小。为提高大功率半导体激光器对固体或光纤激光器等的抽运效率，就要降低半导体激光器的输出波长随注入电流和热沉温度的漂移系数。分析了光栅深度和光栅填充因子对激光器输出波长锁定效果的影响，实验验证确定出合适的光栅参数，依据优化条件得出合适的激光器腔长，制备出锁定效果良好的宽条分布反馈激光器。该激光器的单管腔长2.4 mm，发光条宽100 μm，连续最大输出功率400 mW，热沉温度为15 ℃时的输出波长为954 nm，输出波长随注入电流的漂移系数为0.67 nm/A，输出波长的温漂系数为0.046 nm/K。

High-power semiconductor laser is commonly used for pump source, but the absorption spectra width of the ion which is pumped by the laser is often small. In order to improve the pumping efficiency of high-power semiconductor laser to solid or fiber laser, the current and thermal drift coefficient of wavelength should be decreased. The influence of grating depth and grating duty cycle with the laser wavelength stabilized effect are analyzed theoretically. The appropriate grating parameter is obtained by experimental verification. And the appropriate laser cavity length is obtained according to the optimized condition. The first broad area distributed-feedback (DFB) laser whose wavelength is well-locked is fabricated interiorly. The broad area DFB laser single emitter with 2.4 mm cavity length, 100 μm stripe width produce coutinuous-wave output power of 400 mW at 15 ℃ heatsink temperature and its wavelength is 954 nm. The current drift of wavelength on this DFB laser is 0.67 nm/A and the thermal drift coefficient of wavelength on this DFB laser is 0.046 nm/K.