Chinese Optics Letters, 2011, 9 (9): 093101, Published Online: Jul. 13, 2011
Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates 
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金属有机化学气相沉积 氮化镓 光致发光 阴极荧光 310.6860 Thin films, optical properties 310.0310 Thin films 310.1860 Deposition and fabrication 300.6470 Spectroscopy, semiconductors
Abstract
A-plane GaN films are deposited on (302) \gamma-LiAlO2 substrates by metalorganic chemical vapor deposition (MOCVD). The X-ray diffraction (XRD) results indicate that the in-plane orientation relationship between GaN and LAO substrates is [010]LAO//[0001]GaN and [203]LAO//[1100]GaN with 0.03% and 2.85% lattice mismatch, respectively. Raman scattering results indicate that the strain in the films decreases along with the increase in the thickness of the films. In addition to the band edge emission at 3.42 eV, defects-related luminescence at 3.35 eV is observed in the photoluminescence (PL) spectra. The cathodoluminescence (CL) spectra indicate that the 3.35-eV emission is related to the V pits.
Tingting Jia, Shengming Zhou, Hui Lin, Hao Teng, Xiaorui Hou, Jianqi Liu, Jun Huang, Min Zhang, Jianfeng Wang, Ke Xu. Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on \gamma-LiAlO2 (302) substrates[J]. Chinese Optics Letters, 2011, 9(9): 093101.
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