采用440 nm短波长InGaN/GaN基蓝光LED芯片激发高效红、 绿荧光粉制得高显色性白光LED, 研究了不同胶粉配比对LED发光性能的影响, 结果表明, A胶、 B胶、 绿粉、 红粉比重在0.5∶0.5∶0.2∶0.03时, 在440 nm蓝光激发下呈现了有两个谱带组成的发光光谱, 分别是峰值为535 nm的特征光谱和643 nm的特征光谱, 胶粉通过均匀调配后能够有效的进行混光产生低色温白光, 实验中最低色温可达3 251 K, 显色指数高达88.8, 这比传统蓝光激发YAG荧光粉制得的白光LED色温更低, 显色指数提高了26%。

The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED. The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5∶0.5∶0.2∶0.03, two luminance bands are stimulated and their wavelength peaks are 535 and 643 nm, respectively. The minimum color temperature can reach 3 251 K, while the color rendering is as high as 88.8. Compared with the traditional white LED fabricated by yellow YAG-phosphors-coated high efficiency 460 nm blue LED, the color temperature is lower and the color rendering index can be increased by almost 26%.