详细分析了两类碲镉汞(HgCdTe)材料的磁输运特性，并以此寻找两类材料的有效筛选方法。窄禁带HgCdTe 是一种电子和空穴混合导电的多载流子体系材料。特别是“弱p型”材料，由于电子的迁移率比空穴的大两个数量级 ([EQUATION])，更容易受到少数载流子(电子)的干扰，因此通过单一磁场的霍尔测试无法区分 性能很差的低迁移率n型材料和“弱p型”材料。通过变温变磁场的霍尔测试对两种碲镉汞材料的磁输运特性进行了测试，并 结合迁移率谱技术分析了两者的差别。结果表明，利用迁移率谱技术可以很好地区分这两种碲镉汞材料。

The magneto-transport characteristics of two classes of HgCdTe materials are analyzed in detail so as to seek out an effective method for screening them. Narrow-gap HgCdTe is a multi-carrier semiconductor system material in which both electrons and holes contribute to conduction. Particularly in the slight n-type HgCdTe material, because the mobility of the electrons is two orders of magnitude greater than that of the holes ([EQUATION]), it is more likely to be interfered with minority carriers. Therefore, it is impossible to distinguish the low mobility n-type material from the slight p-type with excellent electric properties by using conventional single-field Hall measurements. The magneto-transport characteristics of both HgCdTe materials are measured by using a variable-field Hall measurement method at various temperatures and their differences are analyzed by using a mobility spectrum analysis (MSA) technique. The result shows that the MSA is a technique suitable for distinguishing above both HgCdTe materials.