研究了不同的腐蚀液对 InSb 表面及台面腐蚀特性，利用金相显微镜和轮廓仪对样品表面形貌和制作精度进行了表征。通过大量的实验对比，得到一种对 InSb 有很好腐蚀特性的腐蚀液，腐蚀速度易于控制，晶片腐蚀后的表面比较光滑、均匀；对台面的钻蚀小，提高了台面的制作精度及器件的性能，解决了现有工艺中的难题。

In this paper, the wet etching characteristic of InSb wafer was studied in different etchingsolutions. The surface morphology and etching rate were observed by metallographic microscopic andthree-dimensional profile meter. A good etching solution was found and the etching rate was moderate andeasy to control. The morphology of surface was good and met the demand for the device facture.