光电子技术, 2011, 31 (2): 125, 网络出版: 2011-07-27
白光LED用ZnMoO4∶Tb3+,K+发光材料的制备及发光特性
Synthesis and Photoluminescence of ZnMoO4∶Tb3+,K+ Phosphors for LED
摘要
采用高温固相法合成了Zn0.85Tb0.15MoO4绿色荧光粉,利用XRD和荧光光谱仪对样品进行了测试表征。XRD测试结果表明,在800°C温度下烧结能形成ZnMoO4纯相。激发光谱由MoO42-的电荷迁移宽带(CT)和Tb3+离子特征激发峰组成;研究发现,掺杂了K+离子后电荷迁移带峰位位置向短波方向移动;分析了碱土金属离子K+作为电荷补偿剂对样品发光性能的影响,发现加入电荷补偿剂可大大提高样品的发光强度。该荧光粉的发射光谱光由位于487 nm,543 nm,584 nm,620 nm处的四组发射峰组成,分别对应Tb3+的5D4-7F6(487 nm),5D4-7F5(543 nm),5D4-7F4(584 nm)和5D4-7F3(620 nm)能级跃迁,而5D4-7F5(543 nm)的跃迁发射最强。
Abstract
The phosphor was prepared by solid-state reaction method in high temperature and its crystal structure and luminescent properties were investigated. The X-ray diffraction patterns (XRD) showed that the phosphor calcinated at 800°C can obtain pure ZnMoO4 phase. The excitation spectrum consisted of MoO42-charge transitions (CT) and Tb3+ ions stimulate peak. The study found that the charge transferred to short positions peak doped with K ions.Influence on the performance of the sample of the K+ charge compensation is analyzed, improving the luminous intensity greatly. The emission spectrum of light is composed by four emission peaks, located in 487 nm, 543 nm, 584 nm, 620 nm emission peak, corresponding to the Tb3+5D4-7F6 (487 nm), 5D4-7F5 (543 nm), 5D4-7F4 (584 nm) and 5D4-7F3 (620 nm),among which the 5D4 transition 7F5 (543 nm) to launch transition the strongest.
邱桂明, 许成科, 杨英权. 白光LED用ZnMoO4∶Tb3+,K+发光材料的制备及发光特性[J]. 光电子技术, 2011, 31(2): 125. Qiu Guiming, Xu Chengke, Yang Yingquan. Synthesis and Photoluminescence of ZnMoO4∶Tb3+,K+ Phosphors for LED[J]. Optoelectronic Technology, 2011, 31(2): 125.