半导体光子学与技术, 1995, 1 (1): 62, 网络出版: 2011-07-29
High performance superluminescent diodes at 1.3 μm wavelength
High performance superluminescent diodes at 1.3 μm wavelength
摘要
Abstract
The design,fabrication and performance of 1.3μm superluminescent diodes are reported.A InP window structure and a passive absorber waveguide in different plane are applied to suppress lasing oscillation.A buried crescent structure similar to a laser diode is introduced to achieve high output power.The output power of about 70O μW is coupled into a single-mode fiber at 150 mA and 25℃.Spectrum width is more than 30 nm.The devices operate in superluminescent state in the range from 0 ℃ to 60 ℃.
ZHU Zhiwen, CAI Haiqing. High performance superluminescent diodes at 1.3 μm wavelength[J]. 半导体光子学与技术, 1995, 1(1): 62. ZHU Zhiwen, CAI Haiqing. High performance superluminescent diodes at 1.3 μm wavelength[J]. Semiconductor Photonics and Technology, 1995, 1(1): 62.
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