半导体光子学与技术, 1996, 2 (2): 84, 网络出版: 2011-08-02
Analytical Model for Calculating Trapped Charge in a-Si:H and Its Relative Error Analysis
Analytical Model for Calculating Trapped Charge in a-Si:H and Its Relative Error Analysis
摘要
Abstract
Using a Taylor series expansion for the Fermi-Dirac occupation func-tion,an accurate analytical model is developed for calculating the trapped-charge density in a-Si:H considering deep and tail states simultaneously without simplification.This is followed by the investigation of the relative errors of the localized trapped charge density in a-Si:H at all temperatures as a function of the quasi-Fermi levll in the band gap cal-culated from three published analytical models and our above model.The results suggest that the relative errors of all these models increase notably as Efn is very closed to Ec(e.g.,-0.01eV
WAN Xinheng, XU Zhongyang, ZOU Xuecheng. Analytical Model for Calculating Trapped Charge in a-Si:H and Its Relative Error Analysis[J]. 半导体光子学与技术, 1996, 2(2): 84. WAN Xinheng, XU Zhongyang, ZOU Xuecheng. Analytical Model for Calculating Trapped Charge in a-Si:H and Its Relative Error Analysis[J]. Semiconductor Photonics and Technology, 1996, 2(2): 84.