半导体光子学与技术, 1996, 2 (4): 289, 网络出版: 2011-08-02  

Silicon Photodiode with Very Small Sensitive Area

Silicon Photodiode with Very Small Sensitive Area
作者单位
Wuhan University, Wuhan 430072, CHN
摘要
Abstract
The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density JLS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in substance by measuring the light current of the PN junction photodiode with very small senitive area.

YIN Changsong, LI Xiaojun. Silicon Photodiode with Very Small Sensitive Area[J]. 半导体光子学与技术, 1996, 2(4): 289. YIN Changsong, LI Xiaojun. Silicon Photodiode with Very Small Sensitive Area[J]. Semiconductor Photonics and Technology, 1996, 2(4): 289.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!