半导体光子学与技术, 1996, 2 (4): 289, 网络出版: 2011-08-02
Silicon Photodiode with Very Small Sensitive Area
Silicon Photodiode with Very Small Sensitive Area
摘要
Abstract
The silicon PN junction photodiode with very small sensitive area has been investigated.The device gets superhigh light current density JLS counted by the sensitive area in the planar PN junction.The superhigh light current density is due to the light current transferred by the photogenated minority carriers in the area around edges of the dopant diffused region.Then,we can determine the diffusion length of the photogenerated minority carriers in substance by measuring the light current of the PN junction photodiode with very small senitive area.
YIN Changsong, LI Xiaojun. Silicon Photodiode with Very Small Sensitive Area[J]. 半导体光子学与技术, 1996, 2(4): 289. YIN Changsong, LI Xiaojun. Silicon Photodiode with Very Small Sensitive Area[J]. Semiconductor Photonics and Technology, 1996, 2(4): 289.