Chinese Optics Letters, 2011, 9 (10): 103102, Published Online: Aug. 8, 2011
Intrinsic ZnO f ilms fabricated by DC sputtering from oxygen-def icient targets for Cu(In,Ga)Se2 solar cell application Download: 727次
氧化锌 薄膜 溅射 扩散阻挡层 太阳能电池 310.6845 Thin film devices and applications 310.7005 Transparent conductive coatings 310.1860 Deposition and fabrication
Abstract
Intrinsic zinc oxide films, normally deposited by radio frequency (RF) sputtering, are fabricated by direct current (DC) sputtering. The oxygen-deficient targets are prepared via a newly developed double crucible method. The 800-nm-thick film obtaines significantly higher carrier mobility compareing with that of the 800-nm-thick ZnO film. This is achieved by the widely used RF sputtering, which favors the prevention of carrier recombination at the interfaces and reduction of the series resistance of solar cells. The optimal ZnO film is used in a Cu (ln, Ga) Se2 (CIGS) solar cell with a high efficiency of 11.57%. This letter demonstrates that the insulating ZnO films can be deposited by DC sputtering from oxygen-deficient ZnO targets to lower the cost of thin film solar cells.
Chongyin Yang, Dongyun Wan, Zhou Wang, Fuqiang Huang. Intrinsic ZnO f ilms fabricated by DC sputtering from oxygen-def icient targets for Cu(In,Ga)Se2 solar cell application[J]. Chinese Optics Letters, 2011, 9(10): 103102.