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Study of diode-pumped Yb:YAG disk lasers at low temperature

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Abstract

A Yb:YAG disk laser with V-shaped stable resonator and active-mirror configuration, end-pumped by a 940-nm InGaAs laser diode array, is demonstrated. Performances and optimization of the disk laser at low temperature over a range of 130–200 K are investigated theoretically and experimentally. Laser output energy of 1.46 J/pulse operating at 10-Hz repetition rate is obtained with the optimum output coupler transmission of 30%, and the corresponding optical-to-optical efficiency is 48.7%.

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DOI:10.3788/col201109.111403

所属栏目:Lasers and laser optics

收稿日期:2011-04-15

修改稿日期:2011-05-28

网络出版日期:2011-08-03

作者单位    点击查看

王建磊:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
张振华:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
程小劲:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
李磊:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
施翔春:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
朱小磊:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
陈卫标:Shanghai Key Laboratory of All Solid-State Laser and Applied Techniques, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

联系人作者:郑继承(expert@siom.ac.cn)

备注:The works was supported by the Natural Science Foundation of Shanghai, China under Grant No.09ZR1435100

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