半导体光子学与技术, 1998, 4 (2): 84, 网络出版: 2011-08-08  

Analysis on Conductivity of nc-Si:H Films

Analysis on Conductivity of nc-Si:H Films
作者单位
Dept. of S. S. Electron., Huazhong University of Sci. and Tech., Wuhan 430074, CHN
摘要
Abstract
A conduction channel model is propsed to explain the high conductivity property of nc-Si:H.Detailed energy band diagram is developed based on the analysis and calculation ,and the conductivity of the nc-Si:H was then analysed on the basis of energy band theory.It is assumed that the conductivity of the nc-Si:H stems from two parts:the conductance of the interface,where the transport mechanism is identified as a thermal -assisted tunneling process,and the conductance along the channel around the grain,which mainly determined the high conductivity of the nc-Si:H.The conductivity of nc-Si:H is calculated and compared with the experiment data .The theory is in agreement with the experiment.

QIANG Wei, XU Zhongyang, WANG Changan, ZENG Xiangbin, DAI Yongbin, ZHOU Xuemei. Analysis on Conductivity of nc-Si:H Films[J]. 半导体光子学与技术, 1998, 4(2): 84. QIANG Wei, XU Zhongyang, WANG Changan, ZENG Xiangbin, DAI Yongbin, ZHOU Xuemei. Analysis on Conductivity of nc-Si:H Films[J]. Semiconductor Photonics and Technology, 1998, 4(2): 84.

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