半导体光子学与技术, 1998, 4 (4): 231, 网络出版: 2011-08-08
Near Infrared Electroluminescence of Er-doped ZnS Thin Film Devices
Near Infrared Electroluminescence of Er-doped ZnS Thin Film Devices
摘要
Abstract
Near infrared electroluminescence characteristics of the Er-doped ZnS thin film devices,fabricated by thermal evaporation with two boats, are reported. The study of the film microstructure has been carried out using X-ray diffraction. The effects of the Er-doped film microstructure on luminescence are pointed out.
WANG Yujiang, LIU Zhaohong, CHEN Mouzhi, LIU Ruitang, ZENG Yongzhi. Near Infrared Electroluminescence of Er-doped ZnS Thin Film Devices[J]. 半导体光子学与技术, 1998, 4(4): 231. WANG Yujiang, LIU Zhaohong, CHEN Mouzhi, LIU Ruitang, ZENG Yongzhi. Near Infrared Electroluminescence of Er-doped ZnS Thin Film Devices[J]. Semiconductor Photonics and Technology, 1998, 4(4): 231.
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