半导体光子学与技术, 1998, 4 (4): 253, 网络出版: 2011-08-08  

Study on Surface States of Zinc Sulfide Electroluminescence Thin Films

Study on Surface States of Zinc Sulfide Electroluminescence Thin Films
作者单位
Xiamen University, Xiamen 361005, CHN
摘要
Abstract
The zinc sulfide electroluminescence(EL)thin film doped with erbium fabricated by thermal evaporation with two boats,are made and analyzed by the technology of X-ray photoelectron spectroscopy.The information of surface states of the microcrystalline thin films is obtained.The transient EL spectroscopy of the thin film devices is measured and simulated by the formulae of different energy transfer mechanism.The results indicate that the formula of Gaussian line shape can fit well for description of transient EL process of zinc sulfide thin film doped with erbium.It shows that the surface states have important effect on the relaxation peaks during the decay process of EL for the thin film devices.

LIU Zhaohong, WANG Yujiang, CHEN Mouzhi, SUN Shunong, LIU Ruitang. Study on Surface States of Zinc Sulfide Electroluminescence Thin Films[J]. 半导体光子学与技术, 1998, 4(4): 253. LIU Zhaohong, WANG Yujiang, CHEN Mouzhi, SUN Shunong, LIU Ruitang. Study on Surface States of Zinc Sulfide Electroluminescence Thin Films[J]. Semiconductor Photonics and Technology, 1998, 4(4): 253.

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