半导体光子学与技术, 1999, 5 (3): 139, 网络出版: 2011-08-08
Photoluminescence Spectra of Disordered and Ordered Ga0.52In0.48P
Photoluminescence Spectra of Disordered and Ordered Ga0.52In0.48P
摘要
Abstract
Temperature-dependence and excitation-intensity-dependence of photoluminescence spectra for both disordered and ordered Ga0.52 In0.48P are measured.The disordered sample is charactierized by its single pcak photoluminescence spectrum which is excitation-intensity.independent and has different activation energy at different temperature region.The ordered sample shows double peaks,the intensity of the high-energy peak has an anomalous increase firstly and quenches afterwards.The relative henomena are reasonably explained in terms of lattice ordering and orientation superlattice model.
LU Yi-jun, YU Rong-wen, ZHENG Jian-sheng. Photoluminescence Spectra of Disordered and Ordered Ga0.52In0.48P[J]. 半导体光子学与技术, 1999, 5(3): 139. LU Yi-jun, YU Rong-wen, ZHENG Jian-sheng. Photoluminescence Spectra of Disordered and Ordered Ga0.52In0.48P[J]. Semiconductor Photonics and Technology, 1999, 5(3): 139.