半导体光子学与技术, 2000, 6 (1): 23, 网络出版: 2011-08-09  

Optical Characterization of GaN Grown by Plasma Source MBE

Optical Characterization of GaN Grown by Plasma Source MBE
作者单位
State Key Lab. of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050, CHN
摘要
Abstract
By using spectroscopic photoconductance, transmittance and luminescence methods,the optical characterization of GaN grown by plasma source MBE have been evaluated. The imperfection of the epitaxial layer deduced from the measured results have been discussed. The transient responses of the photoconductive detectors have been measured. Two time constants of 0.17 ms and 6.85 ms at room temperature are deduced from the measured results. The origins have also been discussed.

ZHANG Yong-gang, LI Ai-zhen, QI Ming, LI Wei, ZHAO Zhi-biao. Optical Characterization of GaN Grown by Plasma Source MBE[J]. 半导体光子学与技术, 2000, 6(1): 23. ZHANG Yong-gang, LI Ai-zhen, QI Ming, LI Wei, ZHAO Zhi-biao. Optical Characterization of GaN Grown by Plasma Source MBE[J]. Semiconductor Photonics and Technology, 2000, 6(1): 23.

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