半导体光子学与技术, 2000, 6 (2): 96, 网络出版: 2011-08-09
Poly-Si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis
Poly-Si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis
摘要
Abstract
A novel approach of two-step laser crystallization for the growth of poly-Si thin film on glass substrate is investigated. Using this approach, we fabricated poly-Si thin film transistors with electron mobility of 103 cm2/V·s and on/off current ratio of 1×10^7 . They are better than those of the poly-Si TFTs fabricated by conventional single-step excimer laser crystallization. We also analyzed the structure of the laser crystallized poly- Si thin film by spectroscopic ellipsometry, and proposed the models to simulate the poly-Si thin film and calculated the ellipsometric spectra. The calculated results are in good agreement with the measured results.
ZENG Xiang-bin, XU Zhong-yang, DAI Yong-bin, WANG Chang-an, ZHOU Xue-mei, ZHAO Bo-feng. Poly-Si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis[J]. 半导体光子学与技术, 2000, 6(2): 96. ZENG Xiang-bin, XU Zhong-yang, DAI Yong-bin, WANG Chang-an, ZHOU Xue-mei, ZHAO Bo-feng. Poly-Si Thin Film Grown by Excimer Laser Crystallization and Its Ellipsometric Analysis[J]. Semiconductor Photonics and Technology, 2000, 6(2): 96.
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