半导体光子学与技术, 2000, 6 (3): 134, 网络出版: 2011-08-09
Growth of SiGe Films by Cold-wall UHV/CVD Using GeH4 and Si2H6
Growth of SiGe Films by Cold-wall UHV/CVD Using GeH4 and Si2H6
摘要
Abstract
An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is introduced. SiGe alloys and SiGeiSi multiple quantum wells (MQWs) have been grown by cold-wall UHV/CVD using disilane (Si2H6) and germane (GeH4) as the reactant gases on Si (100) substrates. The growth rate and Ge contents in SiGe alloys are studied at different temperature and different gas flow. The growth rate of SiGe alloy is decreased with the increase of GeH4 flow at high temperature . X - ray diffraction measurement shows that SiGeiSi MQWs have good crystallinity, sharp interface and uniformity . No dislocation is found in the observation of transmission electron microscopy ( TEM) of SiGeiSi MQWs. The average deviation of the thickness and the fraction of Ge in single SiGe alloy sample are 3.31 % and 2.01 %, respectively.
CHENG Bu-wen, LI Dai-zong, HUANG Chang-jun, ZHANG Chun-hui, YU Zhuo, WANG Yutian, YU Jin-zhong, YANG Qin-qing, WANG Qi-ming. Growth of SiGe Films by Cold-wall UHV/CVD Using GeH4 and Si2H6[J]. 半导体光子学与技术, 2000, 6(3): 134. CHENG Bu-wen, LI Dai-zong, HUANG Chang-jun, ZHANG Chun-hui, YU Zhuo, WANG Yutian, YU Jin-zhong, YANG Qin-qing, WANG Qi-ming. Growth of SiGe Films by Cold-wall UHV/CVD Using GeH4 and Si2H6[J]. Semiconductor Photonics and Technology, 2000, 6(3): 134.
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