半导体光子学与技术, 2000, 6 (4): 193, 网络出版: 2011-08-09  

High Power InGaAsP/GaAs SCH SQW Lasers

High Power InGaAsP/GaAs SCH SQW Lasers
作者单位
1 Nat. Key Lab. of High Power Semicond. Laser, Changchun Institute of Opt. and Fin. Mechan., Changchun 130022, CHN
2 Nanjing Electron. Device Institute,Nanjing210016, CHN
摘要
Abstract
InGaAsP/GaAs SCH SQW lasers have been prepared by LP-MOCVD. The dependence of threshold current density on cavity length was explained. Laser diodes are characterized by the output power of 1 W to 2 W, threshold current density (Jth) of 330 A/cm2to 450 A/cm2and external differential quantum efficiency (ηd) of 35% to 75%, and these characteristics are in good agreement with the designed requirement.

LI Zhong-hui, YANG Jin-hua, WU Gen-zhu, WANG Xiang-wu, WANG Yu-xia, LI Mei, WANG Ling, ZHANG Xing-de. High Power InGaAsP/GaAs SCH SQW Lasers[J]. 半导体光子学与技术, 2000, 6(4): 193. LI Zhong-hui, YANG Jin-hua, WU Gen-zhu, WANG Xiang-wu, WANG Yu-xia, LI Mei, WANG Ling, ZHANG Xing-de. High Power InGaAsP/GaAs SCH SQW Lasers[J]. Semiconductor Photonics and Technology, 2000, 6(4): 193.

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