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Raman Scattering in GaxIn1-xP and (AlxGa1-x)0.51In0.49P Alloys

Raman Scattering in GaxIn1-xP and (AlxGa1-x)0.51In0.49P Alloys

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Abstract

Raman scattering spectroscopy is applied to investigate the phonon modes in GaxIn1-xP (x=0.52) and (AlxGa1-x)0.51In0.49P (x=0.29) alloys. Two-mode behavior in GaxIn1-xP and three-mode behavior in (AlxGa1-x)0.51In0.49P are observed. In ordered GaxIn1-xP, we clearly distinguish the TO1(GaP-like) mode and the splitting of LO1(GaP-like) and LO2(InP-like) modes, which is believed to be the result of superlattice effect of ordering, and the LO1+LO2mode, which is observed for the first time. In addition to theb/aratio, it’s found that the relative intensity of the FLA and the LO1+LO2modes also corresponds to the degree of order. The TO1and the splitting of LO1and LO2devote together to the reduction of the “valley depth”. In (AlxGa1-x)0.51In0.49P, the doubling of FLA is observed. Due to the influence of Al composition, the GaP-like LO mode becomes a shoulder of the InP-like LO mode. The unresolved Raman spectra indicate the existence of ordered structure in (AlxGa1-x)0.51In0.49P alloys.

Newport宣传-MKS新实验室计划
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中图分类号:O472+.3

基金项目:Natural Science Foundation of Fujian Province of China(No.A9910004 and No.A0110007) and the National Key Laboratory for Infrared Physics of Chinese Academy of Sciences

收稿日期:2001-12-28

修改稿日期:2002-01-21

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LU Yi-jun:Dept. of Physics, Xiamen University, Xiamen 361005, CHN
GAO Yu-lin:Dept. of Physics, Xiamen University, Xiamen 361005, CHN
ZHENG Jian-sheng:Dept. of Physics, Xiamen University, Xiamen 361005, CHN
LI Zhi-feng:Shanghai Institute of Technical Physics, Shanghai 200083, CHN
CAI Wei-ying:Shanghai Institute of Technical Physics, Shanghai 200083, CHN
WANG Xiao-guang:Shanghai Institute of Technical Physics, Shanghai 200083, CHN

【1】Baxter C S, Stobbs W M, Wilkie J H. The morphology of ordered structures in III-V alloys:inferences from a TEM study[J]. J. Crystal Growth, 1991, 112:373-385.

【2】Su L C, Ho I H, Stringfellow G B. Kinetically controlled order/disorder structure in GaInP[J]. Appl. Phys.Lett., 1994, 65(6):749-751.

【3】Sinha K, Mascarenhas A, Alonso R G, et al. Optical investigation of the influence of substrate orientation on spontaneous ordering in Ga0.5In0.5P alloy[J]. Solid State Commun., 1994, 89(10):843-133

【4】Jones G, Cain N, Peggs D W, et al. An optical study of the properties of (AlxGa1-x)0.51In0.49P epitaxial layers with varying composition,hydrostatic pressure and GaAs substrate orientation[J]. Materials Science and Eng. B, 1999, 66:126-130.

【5】Kuan T S, Kuech T F, Wang W I, et al. Long-range order in AlxGa1-xAs[J]. Phys.Rev.Lett., 1985, 54(3):201-204.

【6】Mascarenhas A, Zhang Yong, Alonso R, et al. Orientational superlattices in ordered GaInP2[J]. Solid State Commun., 1996, 100(1):47-51.

【7】Delong M C, Taylor P C, Olson J M. Excitation intensity dependence of photoluminescence in Ga0.52In0.48P[J]. Appl.Phys.Lett., 1990, 57(6):620-622.

【8】Delong M C, Ohlson W D, Viohl I, et al. Evidence for spatially indirect recombination in Ga0.52In0.48P[J]. J.Appl.Phys., 1991, 70(5):2 780-2 787.

【9】Delong M C, Mowbray D J, Hogg R A, et al. Photoluminescence excitation and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P[J]. J.Appl.Phys., 1993, 73(10):5 163-5 172.

【10】Yoon S F, Lui P Y, ZhengHQ. Raman scattering characterization of Si-doped Ga0.52In0.48P grown by solid source molecular beam epitaxy[J]. Materials Science and Eng. B,2000, 76:101-106.

【11】Mestres N, Alsina F, Pascual J, et al. Edge-on micro-Raman assessment of trigonal modes in partially ordered GaInP2[J]. Phys.Rev.B, 1996, 54(24):17 754-17 758.

【12】Cheong H M, Mascarenhas A, Geisz J F, et al. Resonant Raman scattering in spontaneously ordered GaInP2[J]. Phys.Rev.B, 2000, 62(3):1 536-1 539.

【13】Lee H, Klein M V. One mode behavior of LO phonon-plasmon interaction in n-type doped In0.5Ga0.5P/GaAs alloys[J]. J.Appl.Phys., 1997, 81(4):1 899-1 904.

【14】Hassine A, Sapriel J, Berre P L, et al. Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes[J]. Phys. Rev.B, 1996, 54(4):2 728-2 732.

【15】Zachau M, Masselink W T. Luminescence and Raman measurements of InyGa1-yP(0.3

【16】Krost A, Esser N, Selber H, et al. Characterization of ordered and disordered Ga0.51In0.49P domains by micro Raman spectroscopy[J]. J.Crystal Growth, 1994, 145:171-178.

【17】Suzuki T, Gomyo A, Iijima S, et al. Band-gap energy anomaly and sublattice ordering in GaInP and AlGaInP grown by MOVPE[J]. Jpn.J.Appl.Phys., 1988, 27(11):2 098-2 106.

【18】Kubo M, Mannoh M, Takahashi Y, et al. Raman scattering in (AlxGa1-x)0.51In0.49P quaternary alloys [J]. Appl.Phys.Lett., 1988,52(9):715-716.

【19】Asahi H, Emura S, Gonda S, et al. Raman scattering in InGaAlP layers grown by molecular-beam epitaxy[J]. J.Appl.Phys., 1989, 65(12):5 007-5 011.

【20】Kondow M, Minagawa S, Inoue Youji, et al. Anomalous temperature dependence of the ordered Ga0.5In0.5P photoluminescence spectrum[J]. Appl.Phys.Lett., 1989, 54(18):1 760-1 762.

引用该论文

LU Yi-jun,GAO Yu-lin,ZHENG Jian-sheng,LI Zhi-feng,CAI Wei-ying,WANG Xiao-guang. Raman Scattering in GaxIn1-xP and (AlxGa1-x)0.51In0.49P Alloys[J]. Semiconductor Photonics and Technology, 2002, 8(3): 129-134

LU Yi-jun,GAO Yu-lin,ZHENG Jian-sheng,LI Zhi-feng,CAI Wei-ying,WANG Xiao-guang. Raman Scattering in GaxIn1-xP and (AlxGa1-x)0.51In0.49P Alloys[J]. 半导体光子学与技术, 2002, 8(3): 129-134

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