半导体光子学与技术, 2003, 9 (1): 26, 网络出版: 2011-08-11
Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer
Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer
摘要
Abstract
The pure cubic GaN(c-GaN) has been grown on (001)GaAs substrates by ECR-PAMOCVD technique at low temperature using TMGa and high pure N2 as Ga and N sources, respectively. The effects of substrate pretreatment conditions on quality of cubic GaN epilayer are investigated by the measurements of TEM and XRD.It is found that hydrogen plasma cleaning, nitridation and buffer layer growth are very important for quality of cubic GaN epilayer.
QIN Fu-wen, GU Biao, XU Yin, WANG San-sheng, YANG Da-zhi. Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer[J]. 半导体光子学与技术, 2003, 9(1): 26. QIN Fu-wen, GU Biao, XU Yin, WANG San-sheng, YANG Da-zhi. Effects of Substrate Pretreatment Conditions on Quality of GaN Epilayer[J]. Semiconductor Photonics and Technology, 2003, 9(1): 26.