半导体光子学与技术, 2003, 9 (1): 37, 网络出版: 2011-08-11
Effect of Film Thickness on Properties of a-Si∶H Films
Effect of Film Thickness on Properties of a-Si∶H Films
摘要
Abstract
The a-Si∶H films with different thickness smaller than 1μm were deposited by plasma enhanced chemical vapor deposition (PECVD) under the optimum deposition conditions. The effect of different thickness on film properties is analyzed.The results show that,with the increase of the film thickness,the dark conductivity, photoconductivity and threshold voltage increase, the optical gap and peak ratio of TA to TO in the Raman spectra decrease, the refractive index keeps almost constant, and the optical absorption coefficient and current ratio of on/off state first maximize and then reduce.
QIAN Xiang-zhong, CHENG Jian-bo. Effect of Film Thickness on Properties of a-Si∶H Films[J]. 半导体光子学与技术, 2003, 9(1): 37. QIAN Xiang-zhong, CHENG Jian-bo. Effect of Film Thickness on Properties of a-Si∶H Films[J]. Semiconductor Photonics and Technology, 2003, 9(1): 37.